공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-06
Lifecycle StatusNRND (Last Updated: 3 months ago)
관련 부품
InfineonIRL7833SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB200NF04T4
STB200NF04T4 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK
InfineonIRL3803STRLPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;D2Pak;PD 200W;VGS +/-16V
STMicroelectronicsSTB85NF3LLT4
N-Channel 30V - 0.006Ohm - 85A - D2PAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 Infineon IRF1404ZSTRLPBF에 대한 설명입니다.
In a Pack of 5, N-Channel MOSFET, 190 A, 40 V, 3-Pin D2PAK Infineon IRF1404ZSPBF
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 40V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 40V 190A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:190A; On Resistance, Rds(on):3.7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time58 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.34 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.7 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max3.7 mΩ
Rise Time110 ns
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책