공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-03-06
Lifecycle StatusObsolete (Last Updated: 8 months ago)
관련 부품
InfineonIRL7833SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
STMicroelectronicsSTB200NF04T4
STB200NF04T4 N-channel MOSFET Transistor, 120 A, 40 V, 3-Pin D2PAK
InfineonIRL3803STRLPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;D2Pak;PD 200W;VGS +/-16V
STMicroelectronicsSTB85NF3LLT4
N-Channel 30V - 0.006Ohm - 85A - D2PAK LOOhm GATE CHARGE StripFET(TM) II POWER MOSFET
설명
유통업체에서 제공한 Infineon IRF1404ZSPBF에 대한 설명입니다.
Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 200A;D2Pak;PD 230W;VGS +/-1
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
200W(Tc) 20V 4V@ 150µA 150nC@ 10 V 1individualNChannel 40V 3.7mΩ@ 75A,10V 180A 4.34nF@25V D2PAK SMD mount 10mm*9.25mm*4.4mm
HEXFET POWER MOSFET Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N, 40V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:1404; Current Id Max:75A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Pulse Current Idm:710A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance3.7 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time58 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.34 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance3.7 mΩ
Package Quantity1000
Power Dissipation220 W
Rds On Max3.7 mΩ
Recovery Time42 ns
Resistance3.7 MΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time18 ns
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책