공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-06-23
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2026-02-15
LTD Date2026-08-15
설명
유통업체에서 제공한 STMicroelectronics SCT50N120에 대한 설명입니다.
Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 package
STMicroelectronics N-Ch Depletion MOSFET Module SCT Series, Vds=1200V 65A HiP247 TH 3-Pin
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
N-Channel 1200 V 59 mO 122 nC Silicon Carbide Power Mosfet - HiP247
Power Field-Effect Transistor, 65A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
SIC MOSFET, N CH, 1.2KV, 65A, HIP247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 65A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.052ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs:
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)65 A
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vds)1.2 kV
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.9 nF
Max Junction Temperature (Tj)200 °C
Max Operating Temperature200 °C
Max Power Dissipation318 W
Manufacturer Package IdentifierHiP247-8396756
Min Breakdown Voltage1.2 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation318 W
Rds On Max69 mΩ
Schedule B8541290080
Threshold Voltage1.8 V
Dimensions
Height24.45 mm