공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-07-31
Lifecycle StatusObsolete (Last Updated: 2 weeks ago)
LTB Date2022-06-14
LTD Date2022-12-14
관련 부품
STMicroelectronicsPD54008L-E
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Infineon N-Ch Enhancement MOSFET HEXFET Series, Vds=25V, 5.8A, SOT-23, SMD, 3-Pin
InfineonIRLML6244TRPBF
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
설명
유통업체에서 제공한 STMicroelectronics PD84006L-E에 대한 설명입니다.
Transistor RF FET N-CH 25V 5A 870MHz 8-Pin PowerFLAT T/R
RF MOSFET Transistors RF power trans LDmoST plastic
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
31W 15V 1individualNChannel 25V 5A 40pF@ 7V SMD mount
RF MOSFET LDMOS 7.5V POWERFLAT
Rf Power |Stmicroelectronics PD84006L-E
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
MountSurface Mount
Number of Pins14
Number of Terminals8
Technical
Continuous Drain Current (ID)5 A
Current Rating5 A
Drain to Source Breakdown Voltage25 V
Drain to Source Voltage (Vds)25 V
Element ConfigurationSingle
Frequency870 MHz
Gain15 dB
Gate to Source Voltage (Vgs)15 V
Max Frequency1 GHz
Max Operating Temperature150 °C
Max Output Power6 W
Max Power Dissipation31 W
Min Breakdown Voltage25 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage7.5 V
Output Power6 W
PackagingCut Tape (CT)
Power Dissipation31 W
Power Gain14 dB
Test Current150 mA
Test Voltage7.5 V
Voltage Rating25 V