대체 부품
Price @ 1000
$ 0.115
$ 0.084
Stock
9,978,376
287,148
Authorized Distributors
6
6
Mount
Surface Mount
-
Case/Package
SOT-23
-
Drain to Source Voltage (Vdss)
20 V
-
Continuous Drain Current (ID)
6.3 A
6.5 A
Threshold Voltage
900 mV
-
Rds On Max
21 mΩ
-
Gate to Source Voltage (Vgs)
12 V
-
Power Dissipation
1.3 W
-
Input Capacitance
700 pF
-
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-09
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
InfineonIRLML6402TRPBF
Transistor: P-MOSFET; unipolar; -20V; -2.3A; 0.065ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML6402GTRPBF
Single P-Channel 20 V 1.3 W 8.0 nC Hexfet Power Mosfet Surface Mount - SOT-23
Diodes Inc.DMP2066LSN-7
Mosfet, P-Ch, 20V, 4.6A, Sc-59 Rohs Compliant: Yes |Diodes Inc. DMP2066LSN-7
설명
유통업체에서 제공한 Infineon IRLML6244TRPBF에 대한 설명입니다.
20V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 20 V 27 mOhm 8.9 nC HEXFET® Power Mosfet - SOT-23
Power MOSFET, N Channel, 20 V, 6.3 A, 0.021 ohm, SOT-23, Surface Mount
Trans MOSFET N-CH 20V 6.3A 3-Pin SOT-23 T/R
MOSFET,N CH,20V,6.3A,SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:6.3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.016ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:12V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:900Mv; Power Dissipation:1.3W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRLML6244TRPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 6.3 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 27 / Gate-Source Voltage V = 12 / Fall Time ns = 12 / Rise Time ns = 7.5 / Turn-OFF Delay Time ns = 19 / Turn-ON Delay Time ns = 4.9 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 1.3
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기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.3 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance700 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs12 V
Number of Channels1
Number of Elements1
On-State Resistance21 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max21 mΩ
Recovery Time18 ns
Resistance27 MΩ
Rise Time7.5 ns
Schedule B8541290080
Threshold Voltage900 mV
Turn-Off Delay Time19 ns
Turn-On Delay Time4.9 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm