가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFML8244TRPBF | 12,000 | 3K | 3d | ||||||||
| Newark | IRFML8244TRPBF. | 12,000 | 3K | Tape & Reel | ||||||||
| Future Electronics | IRFML8244TRPBF | 507,000 | 3K | Tape & Reel | ||||||||
| Arrow Electronics | IRFML8244TRPBF | 44,323 | 1 | |||||||||
| Rutronik | TMOSS6777 | 9,000 | 3K | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-11-10
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
관련 부품
설명
유통업체에서 제공한 Infineon IRFML8244TRPBF에 대한 설명입니다.
25V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 25 V 41 mOhm 5.4 nC HEXFET® Power Mosfet - SOT-23
MOSFET N-CH 25V 5.8A SOT23 / Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R
Power MOSFET, N Channel, 25 V, 5.8 A, 0.02 ohm, SOT-23, Surface Mount
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.25 W
HEXFET Power MOSFET Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Channel Type:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:5.8A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:1.25W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFML8244TRPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.8 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time2.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance430 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.25 W
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Elements1
On-State Resistance24 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max24 mΩ
Recovery Time17 ns
Resistance41 MΩ
Rise Time2.1 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time9 ns
Turn-On Delay Time2.7 ns
Dimensions
Height1.02 mm
Length3.04 mm
Width1.4 mm