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Price @ 1000
$ 1.328
$ 0.839
Stock
59,519
161,071
Authorized Distributors
2
2
Mount
Through Hole
-
Case/Package
TO-220AB
TO-220AB
Drain to Source Voltage (Vdss)
150 V
-
Continuous Drain Current (ID)
37 A
37 A
Threshold Voltage
-
-
Rds On Max
50 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
178 W
178 W
Input Capacitance
3.2 nF
3.2 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-06-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2011-04-05
LTD Date2011-10-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
InfineonIRFB5615PBF
150V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 onsemi NTP35N15G에 대한 설명입니다.
150 V, 37 A, 50 mOhm Single N-Channel Power MOSFET, TO-220
Tube Through Hole N-Channel Single Mosfet Transistor 37A Ta 37A 178W 120ns
N CHANNEL MOSFET, 150V, 37A, TO-220; Tra
Power Field-Effect Transistor, 37A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)37 A
Current Rating37 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.2 nF
Max Operating Temperature150 °C
Max Power Dissipation178 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation178 W
Rds On Max50 mΩ
Rise Time125 ns
Turn-Off Delay Time90 ns
Voltage Rating (DC)150 V