가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | NTMS4N01R2 | 9,691 | 1611 | |||||||||
| Rochester Electronics | NTMS4N01R2 | 17,191 | 22h | |||||||||
| Microchip USA | NTMS4N01R2 | 131 | 3500 | Tray | 5d | |||||||
| Win Source | WS-NTMS4N01R2 | 20 | 7 | 23h | ||||||||
| Worldway Electronics | NTMS4N01R2 | 16,651 | 7 | Bulk | 22h |
대체 부품
이 부품
대체 부품
Price @ 1000
$ 0.186
$ 0.252
Stock
162,201
193,523
Authorized Distributors
2
5
Mount
-
Surface Mount
Case/Package
-
SOIC
Drain to Source Voltage (Vdss)
-
20 V
Continuous Drain Current (ID)
4.2 A
4.2 A
Threshold Voltage
-
950 mV
Rds On Max
-
40 mΩ
Gate to Source Voltage (Vgs)
10 V
10 V
Power Dissipation
-
-
Input Capacitance
-
1.2 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-02-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2007-12-31
LTD Date2008-06-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi NTMS4N01R2에 대한 설명입니다.
Small Signal MOSFET 20V 4.2A 45 mOhm Single N-Channel SO-8
MOSFETs- Power and Small Signal 20V 4.2A N-Channel No-Cancel/No-Return
Trans MOSFET N-CH 20V 5.9A 8-Pin SOIC N T/R
3300 mA 20 V N-CHANNEL Si SMALL SIGNAL MOSFET
MOSFET PWR N-CHAN 4.2A 20V 8SOIC
Power Field-Effect Transistor, 4.2A I(D), 20V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance40 mΩ
Fall Time50 ns
Gate to Source Voltage (Vgs)10 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Rise Time35 ns
Turn-Off Delay Time45 ns
Voltage Rating (DC)20 V