onsemi FDS8433A

Single P-Channel 20 V 47 mOhm 2.5V Specified Mosfet - SOIC-8

P-Channel MOSFET, 2.5V Specified, -20V, -5A, 47mΩ

2.5W(Ta) 8V 1V@ 250¦ÌA 28nC@ 5V 1P 20V 47m¦¸@ 5A,4.5V 5A 1.13nF@10V SOIC-8 4.9mm*3.9mm*1.75mm

Trans MOSFET P-CH 20V 5A 8-Pin SOIC N T/R

MOSFET, P, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-600mV; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; SMD Marking:FDS8433A; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:-20V; Voltage Vgs Max:-8V; Voltage Vgs Rds on Measurement:-4.5V; Voltage Vgs th Max:-1V

This P-Channel enhancement mode power field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density processis especially tailored to minimize on-state resistance and provide superior switching performance.