공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-12-18
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
관련 부품
onsemiNTMFS6B05NT1G
Single N−Channel Power MOSFET 100V, 104A, 8mΩ Power MOSFET 100 V, 7.7 mΩ, 104 A, Single N−Channel
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ON SEMICONDUCTOR NTMFS6B14NT1G MOSFET Transistor, N Channel, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
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Single N−Channel Power MOSFET 40 V, 150 A, 2.0mΩ Power MOSFET 40 V, 2.0 mΩ, 150 A, Single N−Channel
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Power MOSFET, N Channel, 40 V, 8 A, 0.015 ohm, U-DFN2020, Surface Mount
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DMN62D0LFB Series 60 V 100 mA N-Channel Enhancement Mode Mosfet - X1-DFN1006-3
설명
유통업체에서 제공한 onsemi NTMFS6B03NT1G에 대한 설명입니다.
NTMFS6B03NT1G N-CHANNEL MOSFET TRANSISTOR, 132 A, 100 V, 8-PIN SO-8FL
ON SEMICONDUCTOR NTMFS6B03NT1G MOSFET Transistor, N Channel, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V
Single N-Channel Power MOSFET 100 V, 132 A, 4.8 mΩ Power MOSFET 100 V, 4.8 mΩ, 132 A, Single N−Channel
3.4W(Ta)，165W(Tc) 20V 4V@ 250µA 58nC@ 10 V 1individualNChannel 100V 4.8mΩ@ 20A,10V 19A，132A 4.2nF@50V SO SMD mount 4.9mm*5.9mm*1.05mm
N CHANNEL MOSFET, 100V, DFN-5; Transistor Polarity: N Channel; Continuous Drain Current Id: 132A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Powe
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Terminals5
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation165 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.4 W
Rds On Max4.8 mΩ
Rise Time46 ns
Threshold Voltage4 V
Turn-Off Delay Time29 ns
Turn-On Delay Time16 ns
Dimensions
Height1.15 mm
Length6.1 mm
Width5.1 mm