가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | DMN4020LFDE-7 | 543 | 5 | Cut Tape | ||||||||
| DigiKey | DMN4020LFDE-7DICT-ND | 354 | 1 | Cut Tape | ||||||||
| TME | DMN4020LFDE-7 | 0 | 1 | 6h | ||||||||
| RS (Formerly Allied Electronics) | DMN4020LFDE-7 | 0 | 20 | Bulk | 7h | |||||||
| Avnet | DMN4020LFDE-7 | 0 | 3K | 16h |
관련 부품
Diodes Inc.DMG4800LFG-7
Mosfet, N-Ch, 30V, 7.44A, Dfn3030 Rohs Compliant: Yes |Diodes Inc. DMG4800LFG-7
Diodes Inc.DMP32D4SFB-7B
Mosfet, P-Ch, 30V, 0.4A, Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP32D4SFB-7B
Diodes Inc.DMP58D0LFB-7
Mosfet, P-Ch, 50V, 0.18A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMP58D0LFB-7
설명
유통업체에서 제공한 Diodes Inc. DMN4020LFDE-7에 대한 설명입니다.
Mosfet, N-Ch, 40V, 8A, U-Dfn2020 Rohs Compliant: Yes |Diodes Inc. DMN4020LFDE-7
Power MOSFET, N Channel, 40 V, 8 A, 0.015 ohm, U-DFN2020, Surface Mount
Transistor, MOSFET, N-CH, 40V, 8A, 660mW, 6-UDFN EP
Single N-Channel 40 V 28 mOhm 8.8 nC 0.66 W Silicon SMT Mosfet - UDFN-6
Trans MOSFET N-CH 40V 9.5A 6-Pin DFN T/R (Alt: DMN4020LFDE-7)
MOSFET FET BVDSS 31V 40V N-Ch 8A 28Vgs 1060pF
Power Field-Effect Transistor, 6.7A I(D), 40V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS
Diodes Inc SCT
660mW(Ta) 20V 2.4V@ 250¦ÌA 19.1nC@ 10 V 1N 40V 20m¦¸@ 8A,10V 8A 1.06nF@20V UDFN-20206 2mm*2mm*600¦Ìm
MOSFET N-CH 40V 8A ENHANC. U-DFN2020-6
场效应管, MOSFET, N沟道, 40V, 8A, U-DFN2020;
제조업체 별칭
Diodes Inc.에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Diodes Inc.는 다음 이름으로도 알려져 있습니다:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
기술 사양
Physical
Case/PackageDFN
MountSurface Mount
Number of Pins6
Number of Terminals3
Technical
Continuous Drain Current (ID)6.7 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance20 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time4.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.06 nF
Max Operating Temperature150 °C
Max Power Dissipation2.03 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max20 mΩ
Rise Time7.1 ns
Turn-Off Delay Time15.1 ns
Turn-On Delay Time5.3 ns
Dimensions
Height580 µm
Length2.05 mm
Width2.05 mm