가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | NTMFS5C612NLT1G | 7,500 | 1500 | 1d | ||||||||
| DigiKey | 488-NTMFS5C612NLT1GCT-ND | 1,203 | 1 | Cut Tape | ||||||||
| Flip Electronics | NTMFS5C612NLT1G | 210,000 | 1d | |||||||||
| Newark | NTMFS5C612NLT1G | 0 | 1500 | Tape & Reel | ||||||||
| Onlinecomponents.com | NTMFS5C612NLT1G | 0 | 50 | Bulk |
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
설명
유통업체에서 제공한 onsemi NTMFS5C612NLT1G에 대한 설명입니다.
Single N Channel Power Mosfet 60V, 196A, 1.5M/Reel Rohs Compliant: Yes |Onsemi NTMFS5C612NLT1G
Single N−Channel Power MOSFET 60V, 196A, 1.5mΩ
Single N-Channel 60 V 1.5 mOhm 91 nC 167 W Surface Mount Power Mosfet - SO-8FL
60V 235A 167W 1.5mΩ@10V,50A 2V@250uA N Channel DFN-5(5.1x6.1) MOSFETs ROHS
Power Field-Effect Transistor, 60V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFETs; NTMFS5C612NLT1G; ON SEMICONDUCTOR; 60 V; 235 A; 20 V; 3.8 W
Trans MOSFET N-CH 60V 36A 5-Pin(4+Tab) SO-FL T/R
MOSFET NFET SO8FL 60V 219A 1.8MO
3.8W(Ta),167W(Tc) 20V 2V@ 250¦ÌA 91nC@ 10 V 1N 60V 1.5m¦¸@ 50A,10V 36A,235A 6.66nF@25V DFN-5 4.9mm*5.9mm*1.05mm
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)235 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.5 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.66 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.8 W
Rds On Max1.5 mΩ
Turn-Off Delay Time47 ns
Turn-On Delay Time19 ns
Dimensions
Height1.15 mm