대체 부품
Price @ 1000
$ 7.87
$ 1.523
$ 1.523
Stock
50,814
239,456
239,456
Authorized Distributors
2
6
6
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
TO-263-7
TO-263-7
Drain to Source Voltage (Vdss)
60 V
60 V
60 V
Continuous Drain Current (ID)
240 A
240 A
240 A
Threshold Voltage
1 V
-
-
Rds On Max
1.9 mΩ
1.9 mΩ
1.9 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
16 V
Power Dissipation
380 W
380 W
380 W
Input Capacitance
11.27 nF
11.27 nF
11.27 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-08-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonIRLS3036-7PPBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7-Lead package, D2PAK7P, RoHS
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STMicroelectronicsSTH260N6F6-6
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STMicroelectronicsSTH265N6F6-6AG
Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon AUIRLS3036-7P에 대한 설명입니다.
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package, D2PAK7P, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 300A Automotive 7-Pin(6+Tab) D2PAK Tube
Transistor MOSFET N-ch 60V 210A D2PAK-7
Power Field-Effect Transistor, 240A I(D), 60V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
MOSFET, N-CH, 60V, 300A, D2PAK-7P; Transistor Polarity:N Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:380W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; No. of Pins:7; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Braking
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins7
Number of Terminals6
Technical
Continuous Drain Current (ID)240 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.9 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time170 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance11.27 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.9 mΩ
Package Quantity50
Power Dissipation380 W
Rds On Max1.9 mΩ
Rise Time540 ns
Threshold Voltage1 V
Turn-Off Delay Time89 ns
Turn-On Delay Time81 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm