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Price @ 1000
$ 0.143
$ 0.336
Stock
24,110
271,928
Authorized Distributors
1
2
Mount
Through Hole
-
Case/Package
TO-251-3
TO-251-3
Drain to Source Voltage (Vdss)
30 V
30 V
Continuous Drain Current (ID)
8.9 A
13 A
Threshold Voltage
-
-
Rds On Max
8 mΩ
4.7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.68 W
38.5 W
Input Capacitance
1.3 nF
1.71 nF
공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-08-13
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2012-03-31
LTD Date2012-09-30
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
onsemiNTD4808N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
onsemiNTD4810N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4810N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
설명
유통업체에서 제공한 onsemi NTD4960N-35G에 대한 설명입니다.
Power MOSFET 30V 55A 8 mohm Single N Channel DPAK
Trans MOSFET N-CH 30V 11.1A 3-Pin(3+Tab) IPAK Rail
Power Field-Effect Transistor, 8.9A I(D), 30V, 0.0127ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 8.9A/55A IPAK
N-CHANNEL POWER MOSFET
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8.9 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.7 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature175 °C
Max Power Dissipation1.07 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.68 W
Rds On Max8 mΩ
Resistance8 MΩ
Rise Time20 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time12 ns
Dimensions
Height6.35 mm
Length6.73 mm
Width2.38 mm