공급망
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-04
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2011-01-06
LTD Date2011-07-02
관련 부품
onsemiNTD4810N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 9A Ta 54A Tc 54A 2W 2.6ns
onsemiNTD4806N-1G
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 79A 2.14W 4.7ns
설명
유통업체에서 제공한 onsemi NTD4808N-35G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
MOSFETs- Power and Small Signal NFET 30V 63A 8MOHM
Trans MOSFET N-CH 30V 13.8A 3-Pin(3+Tab) IPAK Tube
Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:63A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-IPAK ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.538 nF
Max Operating Temperature175 °C
Max Power Dissipation54.6 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2 W
Rds On Max8 mΩ
Rise Time102 ns
Turn-Off Delay Time11 ns