대체 부품
Price @ 1000
$ 0.11
$ 0.472
$ 0.472
Stock
78,289
680,692
680,692
Authorized Distributors
1
3
3
Mount
Through Hole
-
-
Case/Package
TO-251-3
DPAK
DPAK
Drain to Source Voltage (Vdss)
30 V
30 V
30 V
Continuous Drain Current (ID)
11 A
11 A
11 A
Threshold Voltage
-
-
-
Rds On Max
6 mΩ
6 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.14 W
2.14 W
2.14 W
Input Capacitance
2.142 nF
2.142 nF
2.142 nF
관련 부품
onsemiNTD4806NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 14A 2.14W 4.7ns
onsemiNTD85N02R-001
Tube Through Hole N-Channel Single Mosfet Transistor 12A Ta 85A Tc 85A 2.4W 12ns
onsemiNTD4808N-35G
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 63A Tc 63A 2W 5.6ns
설명
유통업체에서 제공한 onsemi NTD4806N-1G에 대한 설명입니다.
Tube Through Hole N-Channel Single Mosfet Transistor 11.3A Ta 79A Tc 79A 2.14W 4.7ns
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
Trans MOSFET N-CH 30V 15.6A 3-Pin(3+Tab) IPAK Tube
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET N-CH 30V 11.3A/79A IPAK
Not recommended for new design. Use NTD4906N
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.142 nF
Max Operating Temperature175 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.14 W
Rds On Max6 mΩ
Rise Time23.8 ns
Turn-Off Delay Time26 ns