MOSFET,N CH,20V,1.3A,SSOT3; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On Resistance Rds(on):150mohm; Rds(on) Test Voltage Vgs:2.7V; Power Dissipation Pd:500mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.3A; Power Dissipation Pd:500mW; Voltage Vgs Max:8V
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.