대체 부품
Price @ 1000
$ 0.063
Stock
188,528
653,650
Authorized Distributors
0
6
Mount
Surface Mount
-
Case/Package
SOT-363
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
hFE Min
80
80
Power Dissipation
187 mW
187 mW
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 1 month ago)
관련 부품
onsemiMUN5237DW1T1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
onsemiMUN5235DW1T1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
onsemiMUN5212DW1T1
Bipolar Pre-Biased / Digital Transistor, Dual NPN, 50 V, 50 V, 100 mA, 22 kohm, 22 kohm
onsemiMUN5216DW1T1
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
onsemiSBC847BPDW1T3G
100 mA 45 V, Co-packaged NPN and PNP Bipolar Junction Transistor. ONSSPCTRNSTVU6M5P;
설명
유통업체에서 제공한 onsemi MUN5236DW1T1에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
2 NPN - Pre-Biased (Dual) 385mW 500nA 50V 100mA SOT SMD mount 2mm*1.25mm*900μm
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
100 mA 50 V 2 CHANNEL NPN Si SMALL SIGNAL TRANSISTOR
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min80
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation187 mW
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm