가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | MUN5237DW1T1 | 44,980 | 23h | |||||||||
| Verical | MUN5237DW1T1 | 5,980 | 5455 | |||||||||
| Win Source | WS-MUN5237DW1T1 | 38,700 | 1015 | 1d | ||||||||
| Worldway Electronics | MUN5237DW1T1 | 22,763 | 7 | Tape & Reel | 1d | |||||||
| Fmall Co., Limited | MUN5237DW1T1 | 35,730 | >1wk |
대체 부품
Price @ 1000
$ 0.055
$ 0.075
Stock
394,141
193,568
Authorized Distributors
2
6
Mount
Surface Mount
-
Case/Package
SOT-363
SOT-363-6
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
hFE Min
80
80
Power Dissipation
250 mW
187 mW
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-10-12
LTD Date2007-04-12
관련 부품
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Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
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100 Ma 45 V, Co-Packaged Npn And Pnp Bipolar Junction Transistor/ Reel |Onsemi SBC847BPDW1T3G
설명
유통업체에서 제공한 onsemi MUN5237DW1T1에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 385mW 6-Pin SC-88 T/R
TRANS 2NPN PREBIAS 0.25W SOT363;
TRANS PREBIAS 2NPN 50V SOT-363
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
hFE Min80
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation250 mW
Voltage Rating (DC)50 V
Dimensions
Height1.1 mm