onsemi MUN2233T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

NPN Bipolar Digital Transistor (BRT)

MUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SC-59

MUN2233T1G NPN DIGITAL TRANSISTOR,100 MA 50V 4.7 KOHMS, RATIO OF 0.12,3-PIN SC-59

Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V

ON SEMICONDUCTOR - MUN2233T1G - Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm, 0.1 (Ratio)

BRT TRANSISTOR, AEC-Q101, 50V, 4.7K/47K; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:4.7kohm; Base-Emitter Resistor R2:47k

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.