onsemi MUN2212T1G

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

Transistor: NPN; bipolar; BRT; 50V; 0.1A; 230mW; SC59; R1: 22kO

NPN Bipolar Digital Transistor (BRT)

MUN2212T1G NPN DIGITAL TRANSISTOR, 100 MA 50 V 22 KOHMS, RATIO OF 1, 3-PIN SC-59

onsemi NPNdigital transistor, SOT-346 (SC-59)encapsulation, SMD mount, Maximum DC collector current100 mA, maximum collector-emission voltage50 V

Brt Transistor, 50V, 22K/22Kohm, Sc-59-3; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm; Product Range:- Rohs Compliant: Yes |Onsemi MUN2212T1G.

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.