대체 부품
Price @ 1000
$ 5.362
$ 2.24
Stock
70,237
214,497
Authorized Distributors
1
2
Mount
Through Hole
Through Hole
Case/Package
TO-247
TO-247
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
32 A
34 A
Threshold Voltage
-
-
Rds On Max
75 mΩ
75 mΩ
Gate to Source Voltage (Vgs)
20 V
30 V
Power Dissipation
180 W
180 W
Input Capacitance
5 nF
3.3 nF
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1991-09-01
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2009-12-19
LTD Date2010-06-19
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTW42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 onsemi MTW32N20E에 대한 설명입니다.
Power MOSFET 200V 32A 75 mOhm Single N-Channel TO-247
TRIAC, POWER MOSFET, TO-247, 600 V, N, 200 VDC, 200 VDC, 50 MA (MAX.), 32 A
Trans MOSFET N-CH 200V 32A 3-Pin (3+Tab) TO-247 Rail
MOSFETs- Power and Small Signal 200V 32A N-Channel No-Cancel/No-Return
32 A 200 V 0.085 ohm N-CHANNEL Si POWER MOSFET TO-247AE
32 AMPS, 200 VOLTS N-CHANNEL TO-247 POWER MOSFET Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Current Rating32 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time91 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation180 W
Rds On Max75 mΩ
Rise Time120 ns
Turn-Off Delay Time75 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)200 V
Dimensions
Height20.3 mm
Length15.9 mm
Width5.3 mm