공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2012-02-15
LTD Date2012-08-15
설명
유통업체에서 제공한 STMicroelectronics STW34NB20에 대한 설명입니다.
N-Channel 200V - 0.062 Ohm - 34A TO-247 PowerMESH(TM) MOSFET
MOSFET, POWER, N-CH, VDSS 200V, RDS(ON) 0.062OHM, ID 34A, TO-247,PD 180W, VGS +/-30V
Power Field-Effect Transistor, 34A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:34A; On Resistance, Rds(on):0.08ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247 ;RoHS Compliant: Yes
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight45.359237 mg
Technical
Continuous Drain Current (ID)34 A
Current Rating34 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.3 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation180 W
Rds On Max75 mΩ
Resistance75 mΩ
Rise Time40 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)200 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm