대체 부품
Price @ 1000
$ 0.034
$ 0.034
Stock
1,267,133
73,619,147
73,619,147
Authorized Distributors
2
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
350 mW
225 mW
225 mW
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 21 hours ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 21 hours ago)
관련 부품
Diodes Inc.MMBT2222A-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount
Diodes Inc.MMBT4401-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount
설명
유통업체에서 제공한 onsemi MMBT3904에 대한 설명입니다.
MMBT3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - SOT-23
NPN GENERAL-PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
300mV@ 5mA,50mA NPN 350mW 6V 100nA 60V 40V 200mA SOT-23-3 2.92mm*1.3mm*930¦Ìm
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Case
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):30; Package/Case:SOT-23; C-E Breakdown Voltage:40V; DC Collector Current:0.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:5dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1A; Termination Type:SMD; Voltage Vcbo:60V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책