대체 부품
Price @ 1000
$ 0.034
$ 0.034
Stock
674,408
73,615,197
73,615,197
Authorized Distributors
4
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23-3
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
350 mW
225 mW
225 mW
공급망
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-02-01
Lifecycle StatusObsolete (Last Updated: 23 hours ago)
LTB Date2020-11-13
LTD Date2021-05-13
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 23 hours ago)
관련 부품
Diodes Inc.MMBT2222A-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount
Diodes Inc.MMBT4401-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount
설명
유통업체에서 제공한 onsemi BSR17A에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Trans GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
XTR,SMS,NPN,BSR17A,S23 60V COLLECTOR-BASE,200mA OBS,REFER TO 30-000-03LF
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.
Transistor; Transistor Type:Small Signal Digital (BRT); Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:0.2A; Package/Case:3-SOT-23; Termination Type:SMD; Collector Base Voltage:60V
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency Typ ft:300MHz; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:100; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BSR17A; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:300mW; SMD Marking:U92; Tape Width:8mm; Termination Type:SMD; Turn Off Time:250ns; Turn On Time:70ns; Voltage Vcbo:60V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency300 MHz
Turn-Off Delay Time250 ns
Turn-On Delay Time70 ns
Voltage Rating (DC)40 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책