가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFP460C | 2 | 1d | |||||||||
| Microchip USA | IRFP460C | 332 | 150 | Tray | 2d | |||||||
| Win Source | WS-IRFP460C | 200 | 115 | 34m | ||||||||
| Worldway Electronics | IRFP460C | 17,780 | 7 | Tube | 23h | |||||||
| Aztech | IRFP460C | 524 | 19h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2002-03-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW20NK50Z
N-channel 500 V, 0.23 Ohm, 17 A SuperMESH(TM) Power MOSFET Zener-protected TO-247
설명
유통업체에서 제공한 onsemi IRFP460C에 대한 설명입니다.
Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-3P(N) Rail
RAIL / N-CH/500V/20A/0.27OHM/Substitute of SSH20N50, SSH22N50A
Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Small Signal Field-Effect Transistor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and power factor corrections.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)20 A
Current20 A
Current Rating20 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance240 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time180 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation235 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation235 W
Rds On Max240 mΩ
Rise Time150 ns
Turn-Off Delay Time380 ns
Turn-On Delay Time50 ns
Voltage500 V
Voltage Rating (DC)500 V
Dimensions
Height23.8 mm