가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | HUF75639S3ST | 796 | 1 | Cut Tape | ||||||||
| Verical | HUF75639S3ST | 96,165 | 200 | |||||||||
| Rochester Electronics | HUF75639S3ST | 110,726 | 2h | |||||||||
| Onlinecomponents.com | HUF75639S3ST | 0 | 200 | Bulk | ||||||||
| Future Electronics | HUF75639S3ST | 0 | 800 | Tape & Reel |
대체 부품
이 부품
대체 부품
Price @ 1000
$ 1.257
$ 1.294
Stock
482,923
187,144
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
-
-
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
200 W
Input Capacitance
2 nF
2 nF
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
onsemiHUFA75639S3ST
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
InfineonAUIRF3710ZS
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
설명
유통업체에서 제공한 onsemi HUF75639S3ST에 대한 설명입니다.
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
200W(Tc) 20V 4V@ 250¦ÌA 130nC@ 20 V 1N 100V 25m¦¸@ 56A,10V 56A 2nF@25V D2PAK,TO-263 5.08mm
Transistor, mosfet, n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF75639S3ST
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)56 A
Current Rating56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time60 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height5.08 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책