가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HGTD3N60C3S9A | 2,538 | 665 | |||||||||
| Rochester Electronics | HGTD3N60C3S9A | 8,284 | 23h | |||||||||
| Microchip USA | HGTD3N60C3S9A | 1,652 | 3K | Tray | 17h | |||||||
| Component Stockers USA | HGTD3N60C3S9A | 11,857 | 3d | |||||||||
| Worldway Electronics | HGTD3N60C3S9A | 23,840 | 7 | Tape & Reel | 23h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2003-04-16
LTD Date2003-12-31
관련 부품
onsemiSGR6N60UFTM
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
onsemiSGR6N60UFTF
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
STMicroelectronicsSTGD3NB60FT4
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
InfineonIRGR3B60KD2TRP
52W 7.8A 600V NPT (non-penetrating type) DPAK IGBT Transistors / Modules ROHS
설명
유통업체에서 제공한 onsemi HGTD3N60C3S9A에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 6A 3-Pin (2+Tab) DPAK T/R
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
POWER IGBT UFS 3A 600V TF=275NS MAX TO-252 TAPE AND REEL
IGBTs 6a, 600V N-Ch IGBT UFS Series
6 A 600 V N-CHANNEL IGBT TO-252AA
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.65 V
Collector Emitter Voltage (VCEO)600 V
Current Rating6 A
Element ConfigurationSingle
Fall Time275 ns
Max Collector Current6 A
Max Operating Temperature150 °C
Max Power Dissipation33 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation33 W
Voltage Rating (DC)600 V