가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FGD3N60UNDF | 2,157 | 459 | |||||||||
| Rochester Electronics | FGD3N60UNDF | 2,157 | 4h | |||||||||
| Farnell | FGD3N60UNDF | 0 | 1 | Cut Tape | 1d | |||||||
| Microchip USA | FGD3N60UNDF | 134 | 3500 | 20h | ||||||||
| Component Stockers USA | FGD3N60UNDF | 14,334 | 18h |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2013-01-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2023-03-30
LTD Date2023-09-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
STMicroelectronicsSTGD3NB60FT4
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252AA
onsemiSGR6N60UFTM
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
onsemiSGR6N60UFTF
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.6V @ 15V 3A 6A 30W 15ns/60ns
STMicroelectronicsSTGD3NB60SDT4
Trans IGBT Chip N-CH 600V 6A 48000mW Automotive 3-Pin(2+Tab) DPAK T/R
InfineonIRGR3B60KD2TRP
52W 7.8A 600V NPT (non-penetrating type) DPAK IGBT Transistors / Modules ROHS
설명
유통업체에서 제공한 onsemi FGD3N60UNDF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
IGBT, 600V, 3A, Short Circuit Rated
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
晶体管, IGBT, 600V, 6A, 150度 C, 60W;
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.4 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current6 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation60 W
Reverse Recovery Time21 ns
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책