Infineon IRGR3B60KD2TRP
$ 0.855
관련 부품
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설명
유통업체에서 제공한 Infineon IRGR3B60KD2TRP에 대한 설명입니다.
52W 7.8A 600V NPT (non-penetrating type) DPAK IGBT Transistors / Modules ROHS
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA
SINGLE IGBT, 600V, 7.8A; Transistor Type:IGBT; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:52W; Operating Temperature Range:-55°C to +150°C; Collector Emitter Saturation Voltage Vce(sat):2.4V ;RoHS Compliant: Yes
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)2.4 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current7.8 A
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Operating Temperature-55 °C
PackagingDigi-Reel®
Power Dissipation52 W
Reverse Recovery Time77 ns