공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
관련 부품
onsemiFQU2N60CTU
Transistor: N-MOSFET; unipolar; 600V; 1.9A; 4.7ohm; 2.5W; -55+150 deg.C; THT; IPAK
STMicroelectronicsSTD2HNK60Z-1
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in IPAK package
설명
유통업체에서 제공한 onsemi FQU2N80TU에 대한 설명입니다.
MOSFET N-CH 800V 1.8A IPAK
Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
N-CHANNEL POWER MOSFET
MOSFETs 800V N-Channel QFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.8 A
Current Rating1.8 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance6.3 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max6.3 Ω
Rise Time30 ns
Turn-Off Delay Time25 ns
Voltage Rating (DC)800 V