관련 부품
STMicroelectronicsSTD3NK50Z-1
STMICROELECTRONICS STD3NK50Z-1 MOSFET Transistor, N Channel, 1.15 A, 500 V, 2.8 ohm, 10 V, 3.75 V
InfineonIPU50R2K0CEBKMA1
Power Field-Effect Transistor, 2.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiNDDL01N60Z-1G
Tube Through Hole N-Channel MOSFET (Metal Oxide) Mosfet Transistor 800mA Ta 800mA 26W Tc 600V
설명
유통업체에서 제공한 onsemi FQU1N50TU에 대한 설명입니다.
MOSFET N-CH 500V 1.1A IPAK
Power Field-Effect Transistor, 1.1A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
N-CHANNEL POWER MOSFET
MOSFETs 500V N-Channel QFET
MISCELLANEOUS MOSFETS;
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.1 A
Current Rating1.1 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance9 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance150 pF
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max9 Ω
Rise Time25 ns
Turn-Off Delay Time8 ns
Voltage Rating (DC)500 V