대체 부품
이 부품
대체 부품
Price @ 1000
$ 1.238
$ 1.16
Stock
124,356
381,302
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
4 V
-
Rds On Max
650 mΩ
650 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
51 W
39 W
Input Capacitance
2.29 nF
1.676 nF
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-03-05
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
관련 부품
STMicroelectronicsSTP14NK60ZFP
STP14NK60ZFP N-channel MOSFET Transistor, 13.5 A, 600 V, 3-Pin TO-220FP
STMicroelectronicsSTP13NK60ZFP
N-Channel 600 V, 0.48 Ohm, 13 A TO-220FP Zener-Protected SuperMesh(TM) POWER MOSFET
STMicroelectronicsSTP15NK50ZFP
Mosfet Transistor, N Channel, 14 A, 500 V, 340 Mohm, 10 V, 3.75 V Rohs Compliant: Yes
설명
유통업체에서 제공한 onsemi FQPF12N60C에 대한 설명입니다.
Power MOSFET, N-Channel, QFET®, 600 V, 12 A, 650 mΩ, TO-220F
600V 12A 51W 650m´Î@10V6A 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.53ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.29 nF
Max Operating Temperature150 °C
Max Power Dissipation51 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation51 W
Rds On Max650 mΩ
Rise Time85 ns
Threshold Voltage4 V
Turn-Off Delay Time155 ns
Voltage Rating (DC)600 V