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이 부품
대체 부품
Price @ 1000
$ 1.091
$ 1.238
Stock
301,170
129,370
Authorized Distributors
6
4
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
12 A
12 A
Threshold Voltage
-
4 V
Rds On Max
650 mΩ
650 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
39 W
51 W
Input Capacitance
1.676 nF
2.29 nF
공급망
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
STMicroelectronicsSTP14NK60ZFP
STP14NK60ZFP N-channel MOSFET Transistor, 13.5 A, 600 V, 3-Pin TO-220FP
STMicroelectronicsSTF12NK60Z
Power MOSFET, N Channel, 650 V, 10 A, 640 Milliohms, TO-220FP, 3 Pins, Through Hole
설명
유통업체에서 제공한 onsemi FDPF12N60NZ에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM II, 600 V, 12 A, 650 mΩ, TO-220F
FDPF12N60NZ Series 600 V 12 A 650 mOhm N-Ch PowerTrench® MOSFET - TO-220F
Power Field-Effect Transistor, 12A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 0.53OHM, 12A, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:39W; MSL:- ;RoHS Compliant: Yes
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance650 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.676 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation39 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation39 W
Rds On Max650 mΩ
Rise Time110 ns
Schedule B8541290080
Turn-Off Delay Time80 ns
Turn-On Delay Time25 ns
Dimensions
Height19.5 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책