공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-09-14
LTD Date2012-03-14
관련 부품
VishaySIHP10N40D-GE3
MOSFET, N-CH, 400V, 10A, TO-220AB; Transistor Polarity:N Channel; Continuous Dra
설명
유통업체에서 제공한 onsemi FQP9N50에 대한 설명입니다.
MOSFET N-CH 500V 9A TO-220
Power Field-Effect Transistor, 9A I(D), 500V, 0.73ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:9A; On Resistance, Rds(on):0.58ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:3V ;RoHS Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):730mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:147W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:9A; On State Resistance Max:730mohm; Package / Case:TO-220; Power Dissipation Pd:147W; Power Dissipation Pd:147W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
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- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)9 A
Current Rating9 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance730 mΩ
Drain to Source Voltage (Vdss)500 V
Dual Supply Voltage500 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.45 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation147 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation135 W
Rds On Max730 mΩ
Resistance730 mΩ
Rise Time95 ns
Turn-Off Delay Time93 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)500 V
Dimensions
Height20.4 mm