공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-20
Lifecycle StatusProduction (Last Updated: 6 months ago)
설명
유통업체에서 제공한 Vishay IRF740APBF에 대한 설명입니다.
Transistor MOSFET N-CH 400V 10A 3-Pin (3+Tab) TO-220AB
Single N-Channel 400 V 0.55 Ohms Flange Mount Power Mosfet - TO-220-3
N CHANNEL MOSFET, 400V, 10A, TO-220; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:10A;
POWER MOSFET Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 400V, 10A, To-220; Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:10A; On Resistance Rds(On):0.55Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: No
MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; No. of Pins:3; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1°C/W; Voltage, Vds Max:400V; Voltage, Vgs th Max:4V
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)10 A
Current Rating10 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance550 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max550 mΩ
Resistance550 mΩ
Rise Time35 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time24 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)400 V
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm