공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
설명
유통업체에서 제공한 onsemi FQP11N40C에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 400 V, 10.5 A, 530 mΩ, TO-220
Trans MOSFET N-CH 400V 10.5A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 400V 10.5A TO-220
N-Channel 400 V 530 mOhm 35 nC Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 10.5A I(D), 400V, 0.53ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 400V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd:
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10.5 A
Current10 A
Current Rating10.5 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance530 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time81 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.09 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation135 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation135 W
Rds On Max530 mΩ
Resistance530 MΩ
Rise Time89 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time81 ns
Turn-On Delay Time14 ns
Voltage400 V
Voltage Rating (DC)400 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm