onsemi FQP4N90C

Power MOSFET, N-Channel, QFET®, 900 V, 4 A, 4.2 Ω, TO-220

TRANSISTOR, N-CHANNEL, QFET MOSFET, 900V, 4.0A, 4.2 OHM AT VGS 10V, TO-220

Trans MOSFET N-CH 900V 4A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 900V 4A TO-220

N-Channel 900 V 4.2 O 22 nC Flange Mount QFET Mosfet - TO-220AB

QFET 900 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N-CH, 900V, 4A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:900V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Powe

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

MOSFET, N, TO-220; Transistor Polarity:N; Max Current Id:4.2A; Max Voltage Vds:900V; On State Resistance:3.3ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:140W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220; No. of Pins:3; SVHC:Cobalt dichloride; Case Style:TO-220; Cont Current Id:4.2A; Device Marking:FQP4N90; Max On State Resistance:3.3ohm; Max Voltage Vgs th:5V; Power Dissipation Pd:140W; Pulse Current Idm:16.8A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:900V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)