공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-10-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
설명
유통업체에서 제공한 onsemi FQP3N90에 대한 설명입니다.
MOSFET N-CH 900V 3.6A TO-220
Power Field-Effect Transistor, 3.6A I(D), 900V, 4.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 900V N-Channel QFET
MOSFET, N, TO-220; Transistor type:MOSFET; Current, Id cont:3.6A; Resistance, Rds on:4.25R; Case style:TO-220 (SOT-78B); Case style, alternate:SOT-78B; Current, Idm pulse:14.4A; Pins, No. of:3; Power dissipation:130W; Power, Pd:130W; Resistance, Rds on max:4.25R; Transistor polarity:N; Voltage, Vds max:900V; Voltage, Vgs th max:5V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance4.25 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance910 pF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation130 W
Rds On Max4.25 Ω
Rise Time45 ns
Turn-Off Delay Time40 ns
Voltage Rating (DC)900 V