가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | FQP4N90 | 1,340 | 219 | |||||||||
| Rochester Electronics | FQP4N90 | 2,156 | 14h | |||||||||
| Win Source | WS-FQP4N90 | 20 | 30 | 15h | ||||||||
| Worldway Electronics | FQP4N90 | 7,319 | 7 | Bulk | 3d | |||||||
| QUARKTWIN TECHNOLOGY LTD | FQP4N90 | 문의하기 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-07-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-12-04
LTD Date2010-06-04
관련 부품
STMicroelectronicsSTP5NK100Z
N-CHANNEL 1000V - 3 Ohm - 3.5A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
설명
유통업체에서 제공한 onsemi FQP4N90에 대한 설명입니다.
900V N-Channel MOSFET | MOSFET N-CH 900V 4.2A TO-220
Power Field-Effect Transistor, 4.2A I(D), 900V, 3.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 900V N-Channel QFET
N-CHANNEL POWER MOSFET
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:900V; Current, Id Cont:4.2A; Resistance, Rds On:3.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination Type:Through Hole; Alternate Case Style:SOT-78B; Current, Idm Pulse:16.8A; No. of Pins:3; Power Dissipation:140W; Power, Pd:140W; Resistance, Rds on Max:3.3ohm; Voltage, Vds Max:900V; Voltage, Vgs th Max:5V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)4.2 A
Current Rating4.2 A
Drain to Source Breakdown Voltage900 V
Drain to Source Resistance3.1 Ω
Drain to Source Voltage (Vdss)900 V
Dual Supply Voltage900 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation140 W
Rds On Max3.3 Ω
Resistance3.3 Ω
Rise Time70 ns
Turn-Off Delay Time45 ns
Voltage Rating (DC)900 V