공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
관련 부품
InfineonIRF630NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.3Ohm;ID 9.3A;TO-220AB;PD 82W;VGS +/-20V
InfineonIRF640NPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.15Ohm;ID 18A;TO-220AB;PD 150W;VGS +/-20V
설명
유통업체에서 제공한 onsemi FQP4N20L에 대한 설명입니다.
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 3.8 A, 1.35 Ω, TO-220
Trans MOSFET N-CH 200V 3.8A 3-Pin(3+Tab) TO-220AB Rail
Transistor, mosfet, n-Channel,200V V(Br)Dss,3.6A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP4N20L
Power Field-Effect Transistor, 3.8A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, and motor control.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)3.8 A
Current Rating3.8 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time40 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance310 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max1.35 Ω
Rise Time70 ns
Schedule B8541290080
Turn-Off Delay Time15 ns
Turn-On Delay Time7 ns
Voltage Rating (DC)200 V
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책