공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-09-23
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
관련 부품
InfineonIRFB31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFB33N15DPBF
Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A TO-220AB
InfineonIRFB5620PBF
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
설명
유통업체에서 제공한 onsemi FQP34N20에 대한 설명입니다.
Power MOSFET, N-Channel, QFET®, 200 V, 31 A, 75 mΩ, TO-220
Single N-Channel 200 V 0.075 Ohm 78 nC 180 W DMOS Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Rail
200 V, QFET N-CHANNEL MOSFET Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,200V,31A,TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:200V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:180W; Operating Temperature Range:-55°C to +105°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:31A; Power Dissipation Pd:180W; Voltage Vgs Max:30V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)31 A
Current Rating31 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.1 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Elements1
Power Dissipation180 W
Rds On Max75 mΩ
Rise Time280 ns
Threshold Voltage5 V
Turn-Off Delay Time125 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)200 V
Dimensions
Height9.4 mm
Length10.1 mm
Width4.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책