공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2006-07-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
관련 부품
InfineonIRFB31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFB5620PBF
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
설명
유통업체에서 제공한 onsemi FDP33N25에 대한 설명입니다.
N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220
Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 250 V 94 mOhm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:250V; Continuous Drain Current, Id:33A; On Resistance, Rds(on):0.094ohm; Rds(on) Test Voltage, Vgs:5V; Threshold Voltage, Vgs Typ:30V ;RoHS Compliant: Yes
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:235W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.53°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:235W; Power Dissipation Pd:235W; Pulse Current Idm:132A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)33 A
Current Rating33 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance94 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.135 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation235 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation235 W
Rds On Max94 mΩ
Resistance94 MΩ
Rise Time230 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time75 ns
Turn-On Delay Time35 ns
Voltage Rating (DC)250 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm