onsemi FDPF39N20

N-Channel Power MOSFET, UniFETTM, 200V, 39A, 66mΩ, TO-220F

FDPF39N20 Series 200 V 39 A 66 mOhm N-Ch UniFet Mosfet - TO-220-3FP

Power MOSFET, N Channel, 200 V, 39 A, 0.066 ohm, TO-220F, Through Hole

200V 39A 37W 66m´Î@10V19.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Power Field-Effect Transistor, 39A I(D), 200V, 0.066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:200V; On Resistance Rds(on):66mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:37W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:39A; Package / Case:TO-220F; Power Dissipation Pd:37W; Pulse Current Idm:156A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.