공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-22
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
관련 부품
InfineonIRFB31N20DPBF
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.082Ohm;ID 31A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFB5620PBF
Trans MOSFET N-CH Si 200V 25A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 25A TO-220AB
설명
유통업체에서 제공한 onsemi FQP32N20C에 대한 설명입니다.
Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220
200V 28A 82m´Î@10V14A 156W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
MOSFET, N-CH, 200V, 28A, 156W, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 28A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.068ohm; Rds(on) Test Vol; Available until stocks are exhausted
200 V N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts..
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)28 A
Current Rating28 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation156 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation156 W
Rds On Max82 mΩ
Rise Time270 ns
Schedule B8541290080
Turn-Off Delay Time245 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)200 V
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm