공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-10-12
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
관련 부품
InfineonIRFB4020PBF
200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 onsemi FQP16N25에 대한 설명입니다.
N-Channel Power MOSFET, QFET®, 250 V, 16 A, 230 mΩ, TO-220
TRANSISTOR,MOSFET,N-CHANNEL,250V V(BR)DSS,16A I(D),TO-220
Single N-Channel 250 V 142 W 35 nC Silicon Through Hole Mosfet - TO-220-3
Trans MOSFET N-CH 250V 9.5A 3-Pin(3+Tab) TO-220AB Rail
Power Field-Effect Transistor, 16A I(D), 250V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)16 A
Current Rating16 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance230 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation142 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
Rds On Max230 mΩ
Rise Time140 ns
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)250 V
Dimensions
Height16.3 mm
Length10.67 mm
Width4.7 mm