공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-01-07
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
설명
유통업체에서 제공한 onsemi FQP15P12에 대한 설명입니다.
P-Channel Power MOSFET, QFET®, -120 V, -15 A, 0.2 Ω, DPAK
Trans MOSFET P-CH 120V 15A 3-Pin(3+Tab) TO-220 Tube
Transistor, mosfet, p-Channel,120V V(Br)Dss,15A I(D),to-220Ab Rohs Compliant: Yes |Onsemi FQP15P12
Single P-Channel 120 V 0.2 Ohm 38 nC 100 W DMOS Flange Mount Mosfet - TO-220-3
Power Field-Effect Transistor, 15A I(D), 120V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)15 A
Current Rating-15 A
Drain to Source Breakdown Voltage-120 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)120 V
Element ConfigurationSingle
Fall Time80 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.1 nF
Max Operating Temperature175 °C
Max Power Dissipation100 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Rds On Max200 mΩ
Rise Time100 ns
Turn-Off Delay Time80 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)-120 V