가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | STP14NF12 | 0 | 100 | Bulk | 11h | |||||||
| Farnell | STP14NF12 | 0 | 1 | 9h | ||||||||
| Microchip USA | STP14NF12 | 204 | 3500 | Tray | 4d | |||||||
| Win Source | WS-STP14NF12 | 6,022 | 80 | 22h | ||||||||
| Worldway Electronics | STP14NF12 | 27,303 | 7 | Tube | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2018-08-09
LTD Date2019-02-09
설명
유통업체에서 제공한 STMicroelectronics STP14NF12에 대한 설명입니다.
Mosfet Transistor, N Channel, 7 A, 120 V, 160 Mohm, 10 V, 3 V Rohs Compliant: Yes
N-Channel 120V - 0.16Ohm - 14A - TO-220 LOOhm GATE CHARGE StripFET(TM) POWER MOSFET
STP14NF12 N-CHANNEL MOSFET TRANSISTOR, 14 A, 120 V, 3-PIN TO-220
Trans MOSFET N-CH 120V 14A 3-Pin(3+Tab) TO-220AB Tube
14 A 120 V 0.18 ohm N-CHANNEL Si POWER MOSFET TO-220AB
MOSFET, N CH, 120V, 14A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 120V; On Resistance Rds(on): 0.16ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
N-CHANNEL 120V-0.16 OHM-14A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET Power Field-Effect Transistor, 14A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage120 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)120 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance460 pF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage120 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation60 W
Rds On Max180 mΩ
Rise Time25 ns
Threshold Voltage3 V
Turn-Off Delay Time32 ns
Turn-On Delay Time16 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm