관련 부품
STMicroelectronicsSTP40NF10L
N-Channel 100V - 0.028 Ohm - 40A - TO-220 LOW GATE CHARGE StripFET(TM) II POWER MOSFET
onsemiFDP150N10A-F102
Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 STMicroelectronics STP30NF10에 대한 설명입니다.
N-CHANNEL 100V 0.038 OHM 35A TO-220 LOW GATE CHARGE STripFET II MOSFET
Trans MOSFET N-CH 100V 35A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 100V 35A TO-220
STP30NF10 N-CHANNEL MOSFET TRANSISTOR, 35 A, 100 V, 3-PIN TO-220
N-Channel 100 V 45 mOhm Flange Mount Power Mosfet - TO-220
Power MOSFET, N Channel, 100 V, 35 A, 0.045 ohm, TO-220, Through Hole
N-CHANNEL 100V - 0.038OHM - 35A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 1
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- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)35 A
Current Rating35 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.18 nF
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation115 W
Rds On Max45 mΩ
Resistance45 MΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time45 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm