공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-10-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13
관련 부품
STMicroelectronicsSTD5NK50ZT4
N-channel 500 V, 1.22 Ohm typ., 4.4 A Zener-protected SuperMESH Power MOSFET in DPAK package
설명
유통업체에서 제공한 onsemi FQD5N50CTM에 대한 설명입니다.
Trans MOSFET N-CH 500V 4A 3-Pin(2+Tab) DPAK T/R
QFET 500 V N-CHANNEL MOSFET Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
제조업체 별칭
onsemi에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. onsemi는 다음 이름으로도 알려져 있습니다:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)4 A
Current Rating5 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance625 pF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.4 Ω
Rise Time46 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)500 V
Dimensions
Height2.3 mm
Length6.6 mm
Width6.1 mm